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M29F800FB5AN6E2 IC FLASH 8MBIT PARALLEL 48TSOP I Alliance Memory, Inc.

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M29F800FB5AN6E2 IC FLASH 8MBIT PARALLEL 48TSOP I Alliance Memory, Inc.

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Brand Name :Alliance Memory, Inc.
Model Number :M29F800FB5AN6E2
MOQ :1
Price :Based on current price
Payment Terms :T/T
Supply Ability :In stock
Delivery Time :3-5 work days
Packaging Details :anti-static bag & cardboard box
Memory Type :Non-Volatile
Memory Format :FLASH
Technology :FLASH - NOR
Memory Size :8Mbit
Memory Organization :1M x 8, 512K x 16
Memory Interface :Parallel
Clock Frequency :-
Write Cycle Time - Word, Page :55ns
Access Time :55 ns
Voltage - Supply :4.5V ~ 5.5V
Operating Temperature :-40°C ~ 85°C (TA)
Mounting Type :Surface Mount
Package / Case :48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package :48-TSOP I
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Product Details

General Description

This description applies specifically to the M29F 16Mb (2 Meg x 8 or 1 Meg x 16) nonvolatile memory device, but also applies to lower densities. The device enables READ, ERASE, and PROGRAM operations using a single, low-voltage (4.5–5.5V) supply. On power-up, the device defaults to read mode and can be read in the same way as a ROM or EPROM.
The device is divided into blocks that can be erased independently, preserving valid data while old data is erased. Each block can be protected independently to prevent accidental PROGRAM or ERASE operations from modifying the memory. PROGRAM and ERASE commands are written to the command interface. An on-chip program/erase controller simplifies the process of programming or erasing the device by managing the operations required to update the memory contents.
The end of a PROGRAM or ERASE operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

Features

• Supply voltage
– VCC = 5V
• Access time: 55ns
• Program/erase controller
– Embedded byte/word program algorithms
• Erase suspend and resume modes
• Low power consumption
– Standby and automatic standby
• 100,000 PROGRAM/ERASE cycles per block
• Electronic signature
– Manufacturer code: 0x01h
• Top device codes
– M29F200FT: 0x2251
– M29F400FT: 0x2223
– M29F800FT: 0x22D6
– M29F160FT: 0x22D2
• Bottom device codes
– M29F200FB: 0x2257
– M29F400FB: 0x22AB
– M29F800FB: 0x2258
– M29F160FB: 0x22D8
• RoHS-compliant packages
– TSOP48
– SO44 (16Mb not available for this package)
• Automotive device grade 3
– Temperature: –40 to +125°C
• Automotive device grade 6
– Temperature: –40 to +85°C
• Automotive grade certified (AEC-Q100)

Specifications

Attribute Attribute Value
Manufacturer Micron Technology Inc.
Product Category Memory ICs
Series -
Packaging Tray Alternate Packaging
Package-Case 48-TFSOP (0.724", 18.40mm Width)
Operating-Temperature -40°C ~ 85°C (TA)
Interface Parallel
Voltage-Supply 4.5 V ~ 5.5 V
Supplier-Device-Package 48-TSOP
Memory Capacity 8M (1M x 8, 512K x 16)
Memory-Type FLASH - NOR
Speed 55ns
Format-Memory FLASH

Descriptions

FLASH - NOR Memory IC 8Mb (1M x 8, 512K x 16) Parallel 55ns 48-TSOP
NOR Flash Parallel 5V 8M-bit 1M x 8/512K x 16 55ns Automotive 48-Pin TSOP Tray
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