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DS1220AD-100IND+ IC NVSRAM 16KBIT PARALLEL 24EDIP Analog Devices Inc./Maxim Integrated

Name: DS1220AD100IND IC NVSRAM 16KBIT PARALLEL 24EDIP Analog Devices IncMaxim Integrated
Brand: Analog Devices Inc./Maxim Integrated
Price: 1 USD

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Brand Name :Analog Devices Inc./Maxim Integrated

Model Number :DS1220AD-100IND+

MOQ :1

Price :Based on current price

Payment Terms :T/T

Supply Ability :In stock

Delivery Time :3-5 work days

Packaging Details :anti-static bag & cardboard box

Memory Type :Non-Volatile

Memory Format :NVSRAM

Technology :NVSRAM (Non-Volatile SRAM)

Memory Size :16Kbit

Memory Organization :2K x 8

Memory Interface :Parallel

Clock Frequency :-

Write Cycle Time - Word, Page :100ns

Access Time :100 ns

Voltage - Supply :4.5V ~ 5.5V

Operating Temperature :-40°C ~ 85°C (TA)

Mounting Type :Through Hole

Package / Case :24-DIP Module (0.600", 15.24mm)

Supplier Device Package :24-EDIP

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Product Details

DESCRIPTION

The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The devices also match the pinout of the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number of write cycles that can be executed and no additional support circuitry is required for microprocessor interfacing.

FEATURES

■ 10 years minimum data retention in the absence of external power
■ Data is automatically protected during power loss
■ Directly replaces 2k x 8 volatile static RAM or EEPROM
■ Unlimited write cycles
■ Low-power CMOS
■ JEDEC standard 24-pin DIP package
■ Read and write access times of 100 ns
■ Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
■ Full ±10% VCC operating range (DS1220AD)
■ Optional ±5% VCC operating range (DS1220AB)
■ Optional industrial temperature range of -40°C to +85°C, designated IND

Specifications

Attribute	Attribute Value
Manufacturer	DALLAS SEMICONDUDTORS
Product Category	Memory ICs
Series	DS1220AD
Packaging	Tube
Mounting-Style	Through Hole
Package-Case	24-DIP Module (0.600", 15.24mm)
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	4.5 V ~ 5.5 V
Supplier-Device-Package	24-EDIP
Memory Capacity	16K (2K x 8)
Memory-Type	NVSRAM (Non-Volatile SRAM)
Speed	100ns
Access-Time	100 ns
Format-Memory	RAM
Maximum Operating Temperature	+ 85 C
Operating temperature range	- 40 C
Operating-Supply-Current	85 mA
Interface-Type	Parallel
Organization	2 k x 8
Part-#-Aliases	90-1220A+D1I DS1220AD
Data-Bus-Width	8 bit
Supply-Voltage-Max	5.5 V
Supply-Voltage-Min	4.5 V
Package-Case	EDIP-24

Functional compatible component

Form,Package,Functional compatible component

Manufacturer Part#	Description	Manufacturer	Compare
DS1220Y-100 Memory	Non-Volatile SRAM Module, 2KX8, 100ns, CMOS, PDIP24, 0.720 INCH, EXTENDED, DIP-24	Dallas Semiconductor	DS1220AD-100IND+ vs DS1220Y-100
DS1220AB-100IND Memory	Non-Volatile SRAM Module, 2KX8, 100ns, CMOS, 0.720 INCH, PLASTIC, DIP-24	Maxim Integrated Products	DS1220AD-100IND+ vs DS1220AB-100IND
DS1220AD-100 Memory	Non-Volatile SRAM Module, 2KX8, 100ns, CMOS, PDIP24, 0.720 INCH, EXTENDED, DIP-24	Dallas Semiconductor	DS1220AD-100IND+ vs DS1220AD-100
DS1220Y-100IND Memory	Non-Volatile SRAM Module, 2KX8, 100ns, CMOS, 0.720 INCH,DIP-24	Maxim Integrated Products	DS1220AD-100IND+ vs DS1220Y-100IND
DS1220AD-100IND Memory	Non-Volatile SRAM Module, 2KX8, 100ns, CMOS, 0.720 INCH, PLASTIC, DIP-24	Maxim Integrated Products	DS1220AD-100IND+ vs DS1220AD-100IND
DS1220AB-100+ Memory	Non-Volatile SRAM Module, 2KX8, 100ns, CMOS, PDMA24, 0.720 INCH, ROHS COMPLIANT, PLASTIC, DIP-24	Maxim Integrated Products	DS1220AD-100IND+ vs DS1220AB-100+
DS1220AB-100IND+ Memory	Non-Volatile SRAM Module, 2KX8, 100ns, CMOS, PDMA24, 0.720 INCH, ROHS COMPLIANT, PLASTIC, DIP-24	Maxim Integrated Products	DS1220AD-100IND+ vs DS1220AB-100IND+
DS1220Y-100+ Memory	Non-Volatile SRAM Module, 2KX8, 100ns, CMOS, 0.720 INCH, ROHS COMPLIANT, DIP-24	Maxim Integrated Products	DS1220AD-100IND+ vs DS1220Y-100+
DS1220Y-100IND+ Memory	Non-Volatile SRAM Module, 2KX8, 100ns, CMOS, 0.720 INCH, ROHS COMPLIANT, DIP-24	Maxim Integrated Products	DS1220AD-100IND+ vs DS1220Y-100IND+
DS1220AB-100 Memory	2KX8 NON-VOLATILE SRAM MODULE, 100ns, DMA24, 0.720 INCH, PLASTIC, DIP-24	Rochester Electronics LLC	DS1220AD-100IND+ vs DS1220AB-100

Descriptions

NVSRAM (Non-Volatile SRAM) Memory IC 16Kb (2K x 8) Parallel 100ns 24-EDIP

NVRAM 16k Nonvolatile SRAM

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