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MT46V16M16CY-5B IT:M IC DRAM 256MBIT PARALLEL 60FBGA Micron Technology Inc.

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MT46V16M16CY-5B IT:M IC DRAM 256MBIT PARALLEL 60FBGA Micron Technology Inc.

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Brand Name :Micron Technology Inc.
Model Number :MT46V16M16CY-5B IT:M
MOQ :1
Price :Based on current price
Payment Terms :T/T
Supply Ability :In stock
Delivery Time :3-5 work days
Packaging Details :anti-static bag & cardboard box
Memory Type :Volatile
Memory Format :DRAM
Technology :SDRAM - DDR
Memory Size :256Mbit
Memory Organization :16M x 16
Memory Interface :Parallel
Clock Frequency :200 MHz
Write Cycle Time - Word, Page :15ns
Access Time :700 ps
Voltage - Supply :2.5V ~ 2.7V
Operating Temperature :-40°C ~ 85°C (TA)
Mounting Type :Surface Mount
Package / Case :60-TFBGA
Supplier Device Package :60-FBGA (8x12.5)
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Product Details

GENERAL DESCRIPTION

The DDR333 SDRAM is a high-speed CMOS, dy namic random-access memory that operates at a frequency of 167 MHz (tCK=6ns) with a peak data transfer rate of 333Mb/s/p. DDR333 continues to use the JEDEC standard SSTL_2 interface and the 2n-prefetch architecture.

FEATURES

• 167 MHz Clock, 333 Mb/s/p data rate
•VDD= +2.5V ±0.2V, VDDQ = +2.5V ±0.2V
• Bidirectional data strobe (DQS) transmitted/ received with data, i.e., source-synchronous data capture (x16 has two - one per byte)
• Internal, pipelined double-data-rate (DDR) architecture; two data accesses per clock cycle
• Differential clock inputs (CK and CK#)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center aligned with data for WRITEs
• DLL to align DQ and DQS transitions with CK
• Four internal banks for concurrent operation
• Data mask (DM) for masking write data (x16 has two - one per byte)
• Programmable burst lengths: 2, 4, or 8
• Concurrent Auto Precharge option supported
• Auto Refresh and Self Refresh Modes
• FBGA package available
• 2.5V I/O (SSTL_2 compatible)
• tRAS lockout (tRAP =tRCD)
• Backwards compatible with DDR200 and DDR266

Specifications

Attribute Attribute Value
Manufacturer Micron Technology Inc.
Product Category Memory ICs
Series -
Packaging Tray Alternate Packaging
Package-Case 60-TFBGA
Operating-Temperature -40°C ~ 85°C (TA)
Interface Parallel
Voltage-Supply 2.5 V ~ 2.7 V
Supplier-Device-Package 60-FBGA (8x12.5)
Memory Capacity 256M (16M x 16)
Memory-Type DDR SDRAM
Speed 5ns
Format-Memory RAM

Descriptions

SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 60-FBGA (8x12.5)
DRAM Chip DDR SDRAM 256Mbit 16Mx16 2.6V 60-Pin FBGA
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