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Sanhuang electronics (Hong Kong) Co., Limited

Sanhuang Electronics (Hong Kong) Co., Limite

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MT47H128M16RT-25E:C TR IC DRAM 2GBIT PARALLEL 84FBGA Micron Technology Inc.

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China MT47H128M16RT-25E:C TR IC DRAM 2GBIT PARALLEL 84FBGA Micron Technology Inc. wholesale
  • China MT47H128M16RT-25E:C TR IC DRAM 2GBIT PARALLEL 84FBGA Micron Technology Inc. wholesale

MT47H128M16RT-25E:C TR IC DRAM 2GBIT PARALLEL 84FBGA Micron Technology Inc.
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Brand Name :Micron Technology Inc.
Model Number :MT47H128M16RT-25E:C TR
MOQ :1
Price :Based on current price
Payment Terms :T/T
Supply Ability :In stock
Delivery Time :3-5 work days
Packaging Details :anti-static bag & cardboard box
Memory Type :Volatile
Memory Format :DRAM
Technology :SDRAM - DDR2
Memory Size :2Gbit
Memory Organization :128M x 16
Memory Interface :Parallel
Clock Frequency :400 MHz
Write Cycle Time - Word, Page :15ns
Access Time :400 ps
Voltage - Supply :1.7V ~ 1.9V
Operating Temperature :0°C ~ 85°C (TC)
Mounting Type :Surface Mount
Package / Case :84-TFBGA
Supplier Device Package :84-FBGA (9x12.5)
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Product Details

DDR2 SDRAM

MT47H256M4 – 32 Meg x 4 x 8 banks
MT47H128M8 – 16 Meg x 8 x 8 banks
MT47H64M16 – 8 Meg x 16 x 8 banks

Features

• VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V
• JEDEC-standard 1.8V I/O (SSTL_18-compatible)
• Differential data strobe (DQS, DQS#) option
• 4n-bit prefetch architecture
• Duplicate output strobe (RDQS) option for x8
• DLL to align DQ and DQS transitions with CK
• 8 internal banks for concurrent operation
• Programmable CAS latency (CL)
• Posted CAS additive latency (AL)
• WRITE latency = READ latency - 1 tCK
• Selectable burst lengths (BL): 4 or 8
• Adjustable data-output drive strength
• 64ms, 8192-cycle refresh
• On-die termination (ODT)
• Industrial temperature (IT) option
• Automotive temperature (AT) option
• RoHS-compliant
• Supports JEDEC clock jitter specification

Specifications

AttributeAttribute Value
ManufacturerMicron Technology Inc.
Product CategoryMemory ICs
Series-
Packaging Tape & Reel (TR) Alternate Packaging
Package-Case84-TFBGA
Operating-Temperature 0°C ~ 85°C (TC)
InterfaceParallel
Voltage-Supply 1.7 V ~ 1.9 V
Supplier-Device-Package84-FBGA (9x12.5)
Memory Capacity 2G (128M x 16)
Memory-Type DDR2 SDRAM
Speed2.5ns
Format-MemoryRAM

Descriptions

SDRAM - DDR2 Memory IC 2Gb (128M x 16) Parallel 400MHz 400ps 84-FBGA (9x12.5)



















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