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DS1225AD-200+ IC NVSRAM 64KBIT PARALLEL 28EDIP Analog Devices Inc./Maxim Integrated

Name: DS1225AD200 IC NVSRAM 64KBIT PARALLEL 28EDIP Analog Devices IncMaxim Integrated
Brand: Analog Devices Inc./Maxim Integrated
Price: 1 USD

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Brand Name :Analog Devices Inc./Maxim Integrated

Model Number :DS1225AD-200+

MOQ :1

Price :Based on current price

Payment Terms :T/T

Supply Ability :In stock

Delivery Time :3-5 work days

Packaging Details :anti-static bag & cardboard box

Memory Type :Non-Volatile

Memory Format :NVSRAM

Technology :NVSRAM (Non-Volatile SRAM)

Memory Size :64Kbit

Memory Organization :8K x 8

Memory Interface :Parallel

Clock Frequency :-

Write Cycle Time - Word, Page :200ns

Access Time :200 ns

Voltage - Supply :4.5V ~ 5.5V

Operating Temperature :0°C ~ 70°C (TA)

Mounting Type :Through Hole

Package / Case :28-DIP Module (0.600", 15.24mm)

Supplier Device Package :28-EDIP

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Product Details

DESCRIPTION

The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile SRAMs organized as 8192 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCCfor an out-of-tolerance condition.

FEATURES

10 years minimum data retention in the absence of external power
Data is automatically protected during power loss
Directly replaces 8k x 8 volatile static RAM or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 28-pin DIP package
Read and write access times as fast as 70 ns
Lithium energy source is electrically disconnected to retain freshness until power is applied for the first time
Full ±10% VCCoperating range (DS1225AD)
Optional ±5% VCC operating range (DS1225AB)
Optional industrial temperature range of -40°C to +85°C, designated IND

Specifications

Attribute	Attribute Value
Manufacturer	Maxim Integrated
Product Category	Memory ICs
Series	DS1225AD
Packaging	Tube
Mounting-Style	Through Hole
Package-Case	28-DIP Module (0.600", 15.24mm)
Operating-Temperature	0°C ~ 70°C (TA)
Interface	Parallel
Voltage-Supply	4.5 V ~ 5.5 V
Supplier-Device-Package	28-EDIP
Memory Capacity	64K (8K x 8)
Memory-Type	NVSRAM (Non-Volatile SRAM)
Speed	200ns
Access-Time	200 ns
Format-Memory	RAM
Maximum Operating Temperature	+ 70 C
Operating temperature range	0 C
Operating-Supply-Current	75 mA
Interface-Type	Parallel
Organization	8 k x 8
Part-#-Aliases	90-1225A+D00 DS1225AD
Data-Bus-Width	8 bit
Supply-Voltage-Max	5.5 V
Supply-Voltage-Min	4.5 V
Package-Case	EDIP-28

Functional compatible component

Form,Package,Functional compatible component

Manufacturer Part#	Description	Manufacturer	Compare
DS1225Y-200+ Memory	Non-Volatile SRAM Module, 8KX8, 200ns, CMOS, 0.720 INCH, ROHS COMPLIANT, DIP-28	Maxim Integrated Products	DS1225AD-200+ vs DS1225Y-200+
DS1225AB-200IND Memory	8KX8 NON-VOLATILE SRAM MODULE, 200ns, PDMA28, 0.720 INCH, DIP-28	Rochester Electronics LLC	DS1225AD-200+ vs DS1225AB-200IND
DS1225Y-200 Memory	Non-Volatile SRAM Module, 8KX8, 200ns, CMOS, 0.720 INCH, DIP-28	Maxim Integrated Products	DS1225AD-200+ vs DS1225Y-200
DS1225AD-200 Memory	Non-Volatile SRAM Module, 8KX8, 200ns, CMOS, PDIP28, 0.720 INCH, EXTENDED, DIP-28	Dallas Semiconductor	DS1225AD-200+ vs DS1225AD-200
DS1225AB-200IND+ Memory	Non-Volatile SRAM Module, 8KX8, 200ns, CMOS, PDMA28, 0.720 INCH, ROHS COMPLIANT, DIP-28	Maxim Integrated Products	DS1225AD-200+ vs DS1225AB-200IND+
BQ4010MA-200 Memory	8KX8 NON-VOLATILE SRAM MODULE, 200ns, DMA28, DIP-28	Texas Instruments	DS1225AD-200+ vs BQ4010MA-200
BQ4010YMA-200 Memory	8KX8 NON-VOLATILE SRAM MODULE, 200ns, PDIP28	Texas Instruments	DS1225AD-200+ vs BQ4010YMA-200
DS1225AB-200 Memory	8KX8 NON-VOLATILE SRAM MODULE, 200ns, PDMA28, 0.720 INCH, DIP-28	Rochester Electronics LLC	DS1225AD-200+ vs DS1225AB-200
DS1225AB-200+ Memory	Non-Volatile SRAM Module, 8KX8, 200ns, CMOS, PDMA28, 0.720 INCH, ROHS COMPLIANT, DIP-28	Maxim Integrated Products	DS1225AD-200+ vs DS1225AB-200+
DS1225AD-200IND+ Memory	Non-Volatile SRAM Module, 8KX8, 200ns, CMOS, PDMA28, 0.720 INCH, ROHS COMPLIANT, DIP-28	Maxim Integrated Products	DS1225AD-200+ vs DS1225AD-200IND+

Descriptions

NVSRAM (Non-Volatile SRAM) Memory IC 64Kb (8K x 8) Parallel 200ns 28-EDIP

NVRAM 64k Nonvolatile SRAM

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