Sanhuang electronics (Hong Kong) Co., Limited

Sanhuang Electronics (Hong Kong) Co., Limite

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IS49NLC18160-25B IC DRAM 288MBIT PAR 144FCBGA ISSI, Integrated Silicon Solution Inc

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IS49NLC18160-25B IC DRAM 288MBIT PAR 144FCBGA ISSI, Integrated Silicon Solution Inc

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Brand Name :ISSI, Integrated Silicon Solution Inc
Model Number :IS49NLC18160-25B
MOQ :1
Price :Based on current price
Payment Terms :T/T
Supply Ability :In stock
Delivery Time :3-5 work days
Packaging Details :anti-static bag & cardboard box
Memory Type :Volatile
Memory Format :DRAM
Technology :RLDRAM 2
Memory Size :288Mbit
Memory Organization :16M x 18
Memory Interface :Parallel
Clock Frequency :400 MHz
Write Cycle Time - Word, Page :-
Access Time :20 ns
Voltage - Supply :1.7V ~ 1.9V
Operating Temperature :0°C ~ 70°C (TA)
Mounting Type :Surface Mount
Package / Case :144-TFBGA
Supplier Device Package :144-FCBGA (11x18.5)
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Product Details

■ Features

1. Built-in Schmidt trigger circuit
2. Low voltage operating type (VCC:2.3to 7.0V)
3. High sensitivity type (IS481 E VHL : TYP. 5.4 lx at Ta=25 ˚C)
(IS482 E VLH : TYP. 5.4 lx at Ta=25 ˚C)
4. LSTTL and TTL compatible
5. Low level output under incident light (IS481)
High level output under incident light (IS482)

■ Applications

1. Battery-driven portable equipment

Specifications

Attribute Attribute Value
Manufacturer ISSI
Product Category Memory ICs
Series IS49NLC18160
Type DDR1
Packaging Tray
Unit-Weight 0.015757 oz
Mounting-Style SMD/SMT
Tradename RLDRAM2
Package-Case 144-TFBGA
Operating-Temperature 0°C ~ 70°C (TA)
Interface Common I/O
Voltage-Supply 1.7 V ~ 1.9 V
Supplier-Device-Package 144-FCBGA (11x18.5)
Memory Capacity 288M (16M x 18)
Memory-Type RLDRAM 2
Speed 2.5ns
Access-Time 2.5 ns
Format-Memory RAM
Maximum Operating Temperature + 70 C
Operating temperature range 0 C
Organization 16 M x 18
Supply-Current-Max 408 mA
Data-Bus-Width 18 bit
Supply-Voltage-Max 1.9 V
Supply-Voltage-Min 1.7 V
Package-Case BGA-144
Maximum-Clock-Frequency 400 MHz

Descriptions

DRAM Memory IC 288Mb (16M x 18) Parallel 400MHz 20ns 144-FCBGA (11x18.5)
DRAM 288Mbit x18 Common I/O 400MHz Leaded
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