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CY14B101LA-SP45XI IC NVSRAM 1MBIT PARALLEL 48SSOP Infineon Technologies

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CY14B101LA-SP45XI IC NVSRAM 1MBIT PARALLEL 48SSOP Infineon Technologies

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Brand Name :Infineon Technologies
Model Number :CY14B101LA-SP45XI
MOQ :1
Price :Based on current price
Payment Terms :T/T
Supply Ability :In stock
Delivery Time :3-5 work days
Packaging Details :anti-static bag & cardboard box
Memory Type :Non-Volatile
Memory Format :NVSRAM
Technology :NVSRAM (Non-Volatile SRAM)
Memory Size :1Mbit
Memory Organization :128K x 8
Memory Interface :Parallel
Clock Frequency :-
Write Cycle Time - Word, Page :45ns
Access Time :45 ns
Voltage - Supply :2.7V ~ 3.6V
Operating Temperature :-40°C ~ 85°C (TA)
Mounting Type :Surface Mount
Package / Case :48-BSSOP (0.295", 7.50mm Width)
Supplier Device Package :48-SSOP
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Product Details

Functional Description

The Cypress CY14B101LA/CY14B101NA is a fast static RAM (SRAM), with a nonvolatile element in each memory cell. The memory is organized as 128 K bytes of 8 bits each or 64 K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control.

Features

■ 20 ns, 25 ns, and 45 ns access times
■ Internally organized as 128 K × 8 (CY14B101LA) or 64 K × 16 (CY14B101NA)
■ Hands off automatic STORE on power-down with only a small capacitor
■ STORE to QuantumTrap nonvolatile elements initiated by software, device pin, or AutoStore on power-down
■ RECALL to SRAM initiated by software or power-up
■ Infinite read, write, and RECALL cycles
■ 1 million STORE cycles to QuantumTrap
■ 20 year data retention
■ Single 3 V +20% to -10% operation
■ Industrial temperature
■ Packages
❐ 32-Pin small-outline integrated circuit (SOIC)
❐ 44-/54-Pin thin small outline package (TSOP II)
❐ 48-Pin shrink small-outline package (SSOP)
❐ 48-Ball fine-pitch ball grid array (FBGA)
■ Pb-free and restriction of hazardous substances (RoHS) compliant

Specifications

Attribute Attribute Value
Manufacturer Cypress Semiconductor
Product Category Memory ICs
Series CY14B101LA
Packaging Tube Alternate Packaging
Unit-Weight 0.021175 oz
Mounting-Style SMD/SMT
Operating-Temperature-Range - 40 C to + 85 C
Package-Case 48-BSSOP (0.295", 7.50mm Width)
Operating-Temperature -40°C ~ 85°C (TA)
Interface Parallel
Voltage-Supply 2.7 V ~ 3.6 V
Supplier-Device-Package 48-SSOP
Memory Capacity 1M (128K x 8)
Memory-Type NVSRAM (Non-Volatile SRAM)
Speed 45ns
Access-Time 45 ns
Format-Memory RAM
Pd-Power-Dissipation 1 W
Maximum Operating Temperature + 85 C
Operating temperature range - 40 C
Operating-Supply-Current 52 mA
Organization 128 k x 8
Data-Bus-Width 8 bit
Supply-Voltage-Max 3.6 V
Supply-Voltage-Min 2.7 V
Package-Case SSOP-48

Functional compatible component

Form,Package,Functional compatible component

Manufacturer Part# Description Manufacturer Compare
CY14B101KA-SP45XI
Memory
Non-Volatile SRAM, 64KX16, 45ns, CMOS, PDSO48, ROHS COMPLIANT, SSOP-48 Cypress Semiconductor CY14B101LA-SP45XI vs CY14B101KA-SP45XI
CY14B101KA-SP45XIT
Memory
Non-Volatile SRAM, 64KX16, 45ns, CMOS, PDSO48, ROHS COMPLIANT, SSOP-48 Cypress Semiconductor CY14B101LA-SP45XI vs CY14B101KA-SP45XIT
CY14B101LA-SP45XIT
Memory
Non-Volatile SRAM, 128KX8, 45ns, CMOS, PDSO48, SSOP-48 Cypress Semiconductor CY14B101LA-SP45XI vs CY14B101LA-SP45XIT

Descriptions

NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) Parallel 45ns 48-SSOP
NVRAM NVSRAM Parallel 1Mbit 3V 48-Pin SSOP Tube
NVRAM 1Mb 3V 45ns 128K x 8 nvSRAM
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