Sanhuang electronics (Hong Kong) Co., Limited

Sanhuang Electronics (Hong Kong) Co., Limite

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IS42S16160J-7BLI IC DRAM 256MBIT PAR 54TFBGA ISSI, Integrated Silicon Solution Inc

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IS42S16160J-7BLI IC DRAM 256MBIT PAR 54TFBGA ISSI, Integrated Silicon Solution Inc

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Brand Name :ISSI, Integrated Silicon Solution Inc
Model Number :IS42S16160J-7BLI
MOQ :1
Price :Based on current price
Payment Terms :T/T
Supply Ability :In stock
Delivery Time :3-5 work days
Packaging Details :anti-static bag & cardboard box
Memory Type :Volatile
Memory Format :DRAM
Technology :SDRAM
Memory Size :256Mbit
Memory Organization :16M x 16
Memory Interface :Parallel
Clock Frequency :143 MHz
Write Cycle Time - Word, Page :-
Access Time :5.4 ns
Voltage - Supply :3V ~ 3.6V
Operating Temperature :-40°C ~ 85°C (TA)
Mounting Type :Surface Mount
Package / Case :54-TFBGA
Supplier Device Package :54-TFBGA (8x8)
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Product Details

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

FEATURES

• Clock frequency: 166, 143, 100 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Two banks can be operated simultaneously and independently
• Dual internal bank controlled by A11 (bank select)
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto refresh, self refresh
• 4096 refresh cycles every 128 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Byte controlled by LDQM and UDQM
• Package 400-mil 50-pin TSOP II

Specifications

Attribute Attribute Value
Manufacturer ISSI
Product Category Memory ICs
Series -
Packaging Tray Alternate Packaging
Package-Case 54-TFBGA
Operating-Temperature -40°C ~ 85°C (TA)
Interface Parallel
Voltage-Supply 3 V ~ 3.6 V
Supplier-Device-Package 54-TFBGA (8x8)
Memory Capacity 256M (16M x 16)
Memory-Type SDRAM
Speed 143MHz
Format-Memory RAM

Descriptions

SDRAM Memory IC 256Mb (16M x 16) Parallel 143MHz 5.4ns 54-TFBGA (8x8)
DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TFBGA
DRAM 256M, 3.3V, SDRAM, 16Mx16, 143Mhz, 54 ball BGA (8mmx8mm) RoHS, IT
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