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MT29F2G08ABAEAH4-IT:E IC FLASH 2GBIT PARALLEL 63VFBGA Micron Technology Inc.

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MT29F2G08ABAEAH4-IT:E IC FLASH 2GBIT PARALLEL 63VFBGA Micron Technology Inc.

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Brand Name :Micron Technology Inc.
Model Number :MT29F2G08ABAEAH4-IT:E
MOQ :1
Price :Based on current price
Payment Terms :T/T
Supply Ability :In stock
Delivery Time :3-5 work days
Packaging Details :anti-static bag & cardboard box
Memory Type :Non-Volatile
Memory Format :FLASH
Technology :FLASH - NAND
Memory Size :2Gbit
Memory Organization :256M x 8
Memory Interface :Parallel
Clock Frequency :-
Write Cycle Time - Word, Page :-
Access Time :-
Voltage - Supply :2.7V ~ 3.6V
Operating Temperature :-40°C ~ 85°C (TA)
Mounting Type :Surface Mount
Package / Case :63-VFBGA
Supplier Device Package :63-VFBGA (9x11)
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Product Details

General Description

Micron NAND Flash devices include an asynchronous data interface for high-perform ance I/O operations. These devices use a highly multiplexed 8-bit bus (DQx) to transfer commands,address, and data. There are five control signals used to implement the asyn chronous data interface: CE#, CLE, ALE, WE#, and RE#. Additional signals control hardware write protection (WP#) and monitor device status (R/B#).

Features

• Open NAND Flash Interface (ONFI) 2.2-compliant1
• Multiple-level cell (MLC) technology
• Organization
– Page size x8: 8640 bytes (8192 + 448 bytes)
– Block size: 256 pages (2048K + 112K bytes)
– Plane size: 2 planes x 2048 blocks per plane
– Device size: 64Gb: 4096 blocks;
128Gb: 8192 blocks;
256Gb: 16,384 blocks;
512Gb: 32,786 blocks
• Synchronous I/O performance
– Up to synchronous timing mode 5
– Clock rate: 10ns (DDR)
– Read/write throughput per pin: 200 MT/s
• Asynchronous I/O performance
– Up to asynchronous timing mode 5

tRC/tWC: 20ns (MIN)
• Array performance
– Read page: 50µs (MAX)
– Program page: 1300µs (TYP)
– Erase block: 3ms (TYP)
• Operating Voltage Range
– VCC: 2.7–3.6V
– VCCQ: 1.7–1.95V, 2.7–3.6V
• Command set: ONFI NAND Flash Protocol
• Advanced Command Set
– Program cache
– Read cache sequential
– Read cache random
– One-time programmable (OTP) mode
– Multi-plane commands
– Multi-LUN operations
– Read unique ID
– Copyback
• First block (block address 00h) is valid when shipped
from factory. For minimum required ECC, see
Error Management (page 109).
• RESET (FFh) required as first command after power
on
• Operation status byte provides software method for
detecting
– Operation completion
– Pass/fail condition
– Write-protect status
• Data strobe (DQS) signals provide a hardware method
for synchronizing data DQ in the synchronous
interface
• Copyback operations supported within the plane
from which data is read
• Quality and reliability
– Data retention: 10 years
– Endurance: 5000 PROGRAM/ERASE cycles
• Operating temperature:
– Commercial: 0°C to +70°C
– Industrial (IT): –40ºC to +85ºC
• Package
– 52-pad LGA
– 48-pin TSOP
– 100-ball BGA

Specifications

Attribute Attribute Value
Manufacturer Micron Technology Inc.
Product Category Memory ICs
Categories Memory
Manufacturer Micron Technology Inc.
Series -
Packaging Tray
Part-Status Active
Memory-Type Non-Volatile
Memory-Format FLASH
Technology FLASH - NAND
Memory-Size 2Gb (256M x 8)
Write-Cycle-Time-Word-Page -
Memory-Interface Parallel
Voltage-Supply 2.7 V ~ 3.6 V
Operating-Temperature -40°C ~ 85°C (TA)
Mounting-Type Surface Mount
Package-Case 63-VFBGA
Supplier-Device-Package 63-VFBGA (9x11)
Base-Part-Number MT29F2G08

Descriptions

FLASH - NAND Memory IC 2Gb (256M x 8) Parallel 63-VFBGA (9x11)
SLC NAND Flash Parallel 3.3V 2G-bit 256M x 8 63-Pin VFBGA Tray
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