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CY7C2663KV18-450BZI IC SRAM 144MBIT PAR 165FBGA Infineon Technologies

Name: CY7C2663KV18450BZI IC SRAM 144MBIT PAR 165FBGA Infineon Technologies
Brand: Infineon Technologies
Price: 1 USD

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Brand Name :Infineon Technologies

Model Number :CY7C2663KV18-450BZI

MOQ :1

Price :Based on current price

Payment Terms :T/T

Supply Ability :In stock

Delivery Time :3-5 work days

Packaging Details :anti-static bag & cardboard box

Memory Type :Volatile

Memory Format :SRAM

Technology :SRAM - Synchronous, QDR II+

Memory Size :144Mbit

Memory Organization :8M x 18

Memory Interface :Parallel

Clock Frequency :450 MHz

Write Cycle Time - Word, Page :-

Access Time :-

Voltage - Supply :1.7V ~ 1.9V

Operating Temperature :-40°C ~ 85°C (TA)

Mounting Type :Surface Mount

Package / Case :165-LBGA

Supplier Device Package :165-FBGA (15x17)

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Product Details

Functional Description

The CY7C266 is a high-performance 8192-word by 8-bit CMOS PROM. When deselected, the CY7C266 automatically powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms.

Features

• CMOS for optimum speed/power
• Windowed for reprogrammability
• High speed
— 20 ns (Commercial)
• Low power
— 660 mW (Commercial)
• Super low standby power
— Less than 85 mW when deselected
• EPROM technology 100% programmable
• 5V ±10% VCC, commercial and military
• TTL-compatible I/O
• Direct replacement for 27C64 EPROMs

Specifications

Attribute	Attribute Value
Manufacturer	Cypress Semiconductor
Product Category	Memory ICs
Series	CY7C2663KV18
Type	Synchronous
Packaging	Tray
Mounting-Style	SMD/SMT
Package-Case	165-LBGA
Operating-Temperature	-40°C ~ 85°C (TA)
Interface	Parallel
Voltage-Supply	1.7 V ~ 1.9 V
Supplier-Device-Package	165-FBGA (15x17)
Memory Capacity	144M (8M x 18)
Memory-Type	SRAM - Synchronous, QDR II+
Speed	450MHz
Access-Time	0.45 ns
Format-Memory	RAM
Maximum Operating Temperature	+ 85 C
Operating temperature range	- 40 C
Interface-Type	Parallel
Organization	8 M x 18
Supply-Current-Max	940 mA
Supply-Voltage-Max	1.9 V
Supply-Voltage-Min	1.7 V
Package-Case	FBGA-165
Maximum-Clock-Frequency	450 MHz

Descriptions

SRAM - Synchronous, QDR II+ Memory IC 144Mb (8M x 18) Parallel 450MHz 165-FBGA (15x17)

SRAM Chip Sync Dual 1.8V 144M-Bit 8M x 18 0.45ns 165-Pin FBGA Tray

SRAM 144Mb 1.8V 450Mhz 8M x 18 QDR II SRAM

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