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CY7C1356C-250AXC IC SRAM 9MBIT PAR 100TQFP Infineon Technologies

Name: CY7C1356C250AXC IC SRAM 9MBIT PAR 100TQFP Infineon Technologies
Brand: Infineon Technologies
Price: 1 USD

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Brand Name :Infineon Technologies

Model Number :CY7C1356C-250AXC

MOQ :1

Price :Based on current price

Payment Terms :T/T

Supply Ability :In stock

Delivery Time :3-5 work days

Packaging Details :anti-static bag & cardboard box

Memory Type :Volatile

Memory Format :SRAM

Technology :SRAM - Synchronous, SDR

Memory Size :9Mbit

Memory Organization :512K x 18

Memory Interface :Parallel

Clock Frequency :250 MHz

Write Cycle Time - Word, Page :-

Access Time :2.8 ns

Voltage - Supply :3.135V ~ 3.6V

Operating Temperature :0°C ~ 70°C (TA)

Mounting Type :Surface Mount

Package / Case :100-LQFP

Supplier Device Package :100-TQFP (14x20)

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Product Details

Functional Description

The CY7C1354A and CY7C1356A SRAMs are designed to eliminate dead cycles when transitioning from Read to Write or vice versa. These SRAMs are optimized for 100% bus utilization and achieve Zero Bus Latency™ (ZBL™)/No Bus Latency™ (NoBL™). They integrate 262,144 × 36 and 524,288 × 18 SRAM cells, respectively, with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation. These employ high-speed, low-power CMOS designs using advanced triple-layer polysilicon, double-layer metal technology. Each memory cell consists of four transistors and two high-valued resistors.

Features

• Zero Bus Latency™, no dead cycles between Write and Read cycles
• Fast clock speed: 200, 166, 133, 100 MHz
• Fast access time: 3.2, 3.6, 4.2, 5.0 ns
• Internally synchronized registered outputs eliminate the need to control OE
• Single 3.3V –5% and +5% power supply VCC
• Separate VCCQ for 3.3V or 2.5V I/O
• Single WEN (Read/Write) control pin
• Positive clock-edge triggered, address, data, and control signal registers for fully pipelined applications
• Interleaved or linear four-word burst capability
• Individual byte Write (BWa–BWd) control (may be tied LOW)
• CEN pin to enable clock and suspend operations
• Three chip enables for simple depth expansion
• Automatic power-down feature available using ZZ mode or CE select
• JTAG boundary scan
• Low-profile 119-bump, 14-mm × 22-mm BGA (Ball Grid Array), and 100-pin TQFP packages

Specifications

Attribute	Attribute Value
Manufacturer	Cypress Semiconductor
Product Category	Memory ICs
Series	NoBL™
Type	Synchronous
Packaging	Tray Alternate Packaging
Unit-Weight	0.023175 oz
Mounting-Style	SMD/SMT
Package-Case	100-LQFP
Operating-Temperature	0°C ~ 70°C (TA)
Interface	Parallel
Voltage-Supply	3.135 V ~ 3.6 V
Supplier-Device-Package	100-TQFP (14x20)
Memory Capacity	9M (512K x 18)
Memory-Type	SRAM - Synchronous
Speed	250MHz
Data-Rate	SDR
Access-Time	2.8 ns
Format-Memory	RAM
Maximum Operating Temperature	+ 70 C
Operating temperature range	0 C
Interface-Type	Parallel
Organization	512 k x 18
Supply-Current-Max	250 mA
Supply-Voltage-Max	3.6 V
Supply-Voltage-Min	3.135 V
Package-Case	TQFP-100
Maximum-Clock-Frequency	250 MHz

Functional compatible componentForm,Package,Functional compatible component

Manufacturer Part#	Description	Manufacturer	Compare
IDT71V65803S133PF Memory	ZBT SRAM, 512KX18, 4.2ns, CMOS, PQFP100, PLASTIC, MO-136, TQFP-100	Integrated Device Technology Inc	CY7C1356C-250AXC vs IDT71V65803S133PF
CY7C1356A-133AC Memory	512KX18 ZBT SRAM, 4.2ns, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100	Rochester Electronics LLC	CY7C1356C-250AXC vs CY7C1356A-133AC
CY7C1356C-166AXC Memory	ZBT SRAM, 512KX18, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100	Cypress Semiconductor	CY7C1356C-250AXC vs CY7C1356C-166AXC
71V65803S133PFGI Memory	TQFP-100, Tray	Integrated Device Technology Inc	CY7C1356C-250AXC vs 71V65803S133PFGI
CY7C1356C-166AXI Memory	ZBT SRAM, 512KX18, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, LEAD FREE, PLASTIC, MS-026, TQFP-100	Cypress Semiconductor	CY7C1356C-250AXC vs CY7C1356C-166AXI
IDT71V65803S133PFGI Memory	ZBT SRAM, 512KX18, 4.2ns, CMOS, PQFP100, PLASTIC, MO-136, TQFP-100	Integrated Device Technology Inc	CY7C1356C-250AXC vs IDT71V65803S133PFGI
71V65803S133PFG Memory	TQFP-100, Tray	Integrated Device Technology Inc	CY7C1356C-250AXC vs 71V65803S133PFG
CY7C1356C-200AXI Memory	ZBT SRAM, 512KX18, 3.2ns, CMOS, PQFP100, (14 X 20 X 1.4) MM, LEAD FREE, PLASTIC, TQFP-100	Cypress Semiconductor	CY7C1356C-250AXC vs CY7C1356C-200AXI
71V65803S133PFG8 Memory	TQFP-100, Reel	Integrated Device Technology Inc	CY7C1356C-250AXC vs 71V65803S133PFG8
IDT71V65803S133PFG Memory	ZBT SRAM, 512KX18, 4.2ns, CMOS, PQFP100, PLASTIC, MO-136, TQFP-100	Integrated Device Technology Inc	CY7C1356C-250AXC vs IDT71V65803S133PFG

Descriptions

SRAM - Synchronous Memory IC 9Mb (512K x 18) Parallel 250MHz 2.8ns 100-TQFP (14x20)

SRAM 9Mb 250Mhz 512K x 18 Pipelined SRAM

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